A new material mainly made of In has been created by laser irradiation of chalcopyrite‐type ternary semiconductors containing In such as CuInSe2. The Raman spectra of the created material are always the same independent of the original compounds (CuInS2, CuInSe2, CuInTe2, and AgInSe2). The same spectra could not be produced by laser irradiation of CuGaSe2, AgGaSe2, In metal, or Cu‐In alloys. The crystallization ofa‐Si:H was measured by laser irradiation in the same manner and it was found that CuInSe2was more stable during laser irradiation thana‐Si:H. Hence, CuInSe2could be a promising candidate for solar cells.
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机译：通过激光照射含有 In 的黄铜矿和连字符型三元半导体（如 CuInSe2）创造了一种主要由 In 制成的新材料。所创建材料的拉曼光谱始终相同，与原始化合物（CuInS2、CuInSe2、CuInTe2 和 AgInSe2）无关。CuGaSe2、AgGaSe2、In metal 或 Cu‐In 合金的激光照射无法产生相同的光谱。以同样的方式通过激光照射测量了a‐Si：H的结晶，发现CuInSe2在激光照射过程中比Si：H更稳定，因此CuInSe2可能是太阳能电池的有前途的候选者。
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