0.8 eV excitation of the quenched EL2ast; level in semihyphen;insulating GaAs

摘要

Excitation with 0.8 eV of the optically bleached state of semihyphen;insulating GaAs results in a recovery of the 1ndash;1.3 eV photocurrent. This recovery is found to occur in the advanced stages of the photoquenching with 1.1hyphen;eV light, when both the extrinsic and the intrinsic photocurrent are quenched. Such an observation is related to the existence of different metastable configurations, which are characterized by different optical sensitivities.