Singlehyphen; and multiplehyphen;energy Be+/P+, Be+/Ar+, and Be+/N+coimplantations were performed into semihyphen;insulating InP:Fe. Significantly higher Be dopant activations were obtained for Be+/P+and Be+/Ar+coimplantations compared to Be+implantation. Sharp holehyphen;concentration depth profiles were obtained for Be+/P+and Be+/Ar+coimplantations in contrast to the deep diffusion fronts for Be+implantation. A high degree of crystalline lattice damage in coimplanted material is believed to be responsible for the improved electrical characteristics of the material. A poor Be dopant electrical activation was observed for Be+/N+coimplantation.
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