CdS/InP and CdS/GaAs heterojunctions by chemicalhyphen;vapor deposition of CdS

摘要

CdS/InP and CdS/GaAs heterojunctions were prepared by aninsituH2S/H2etching process and H2transport of CdS onto the InP and GaAs substrates. The etching involves a reaction of the IIIhyphen;V compound surface to the corresponding sesquisulfides and simultaneous or subsequent removal by reduction in H2gas. The etching process changes the junction characteristics considerably. The junction onphyphen;GaAs shows a pinning of the Fermi level at the interface approximately 0.75 eV above the GaAs valence band. The junction onnhyphen;GaAs is Ohmic.