Highhyphen;pressure oxidation of titanium disilicide/polycrystalline silicon composite films

摘要

The oxidation of titanium disilicide on polycrystalline siliconhyphen;coated substrates by steam oxidation at pressures up to 25 atm has been investigated. Films were examined by Rutherford backscattering spectrometry and transmission electron microscopy. At low temperatures, the formation of a silicon dioxide surface layer is limited by the transport of silicon to the reacting interface, resulting in rapid oxidation/decomposition of the silicide. At temperatures greater than 750thinsp;deg;C, a metalhyphen;free oxide was obtained, allowing the formation of a selfhyphen;passivated selfhyphen;aligned silicide structure appropriate for veryhyphen;largehyphen;scalehyphen;integrated circuit applications.