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Thermal properties of pure and varistor ZnO at low temperatures

机译:Thermal properties of pure and varistor ZnO at low temperatures

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摘要

Specific heat data are reported on pure and varistor ZnO, 1.7ndash;25 K, and thermal conductivity data are reported on varistor ZnO, 1.7ndash;15 K. In pure ZnO interstitials give rise to an Einstein contribution (ohgr;E=84 cmminus;1) to the specific heat above 10 K and to a Schottky contribution (dgr;bartil;10minus;5eV) below 4 K due possibly to ordering. The calorimetric Debye temperature is 399.5 K. In varistor ZnO the specific heat is dominated below 20 K by compensating charge densities (sim;1018cmminus;3) on the interfacial barriers which give rise to two Schottky terms (dgr;=7times;10minus;4and 3times;10minus;3eV). All of these nonhyphen;Debye excitations are localized (do not carry heat). No evidence is seen in the thermal conductivity for Kapitzahyphen;resistance effects at the heavily doped grain boundaries.

著录项

  • 来源
    《journal of applied physics 》 |1986年第2期| 607-611| 共页
  • 作者

    W. N. Lawless; T. K. Gupta;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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