Shubnikov–de Haas effect in indium‐doped PbTe films

摘要

Shubnikov–de Haas oscillations in the magnetoresistance were observed inn‐type, (111)‐oriented PbTe films doped with approximately 0.25 at.  indium. Analysis of the data led to a Dingle temperature of 9±1 K and a transverse effective mass of 0.049±0.0006mewith a carrier concentration of 7.0×1024m−3. It was found that the substrate‐induced strain caused significant carrier transfer to the valley with main axis perpendicular to the film plane. Unexplained frequencies observed may indicate the occurrence of a phase transition.