High‐speed 1.3‐mgr;m InGaAsP buried crescent lasers with Fe‐doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine

摘要

Fe‐doped semi‐insulating InP layers grown by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine have been used as a current block layer for high‐speed 1.3‐mgr;m InGaAsP buried crescent lasers. The performance characteristics of such lasers are comparable to those of lasers with a PH3‐grown Fe‐doped semi‐insulating InP current blocking layer over a measurement temperature range of 25 to 85 °C. A 3‐dB modulation bandwidth of 17.5 GHz has been obtained at room temperature and a cw bias current of 100 mA.