The reradiation of leaky surface plasmon polaritons into the semiconductor of a sinusoidally structured Schottky structure is investigated, to our knowledge for the first time. One of the two possible plasmon modes is bound at the metalhyphen;air interface, and is leaky at the interface between the metal film and the semiconductor. It is reradiated into the semiconductor either directly or by coupling with the grating. Therefore, emission of light from the back surface of the sample can be measured at two different angles of observation. The intensities of the two single emission beams and their ratios were measured at various thicknesses of the metal film and were found to be strongly dependent on this parameter.
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