Interface imperfections in metal/Si multilayers

摘要

The structural and optical properties of Mo/Si and Ru/Si xhyphen;ray multilayers prepared by sputter deposition in argon have been examined using highhyphen;resolution transmission electron microscopy, optical profilometry, and xhyphen;ray and soft xhyphen;ray reflectance. We find that for Ru/Si, similar to previous results for Mo/Si, lower argon pressure during deposition results in smoother layers and higher reflectance. For lowhyphen;pressure deposited multilayers, interfacial roughness is negligible compared to interfacial diffuseness; the presence of amorphous interlayer regions in both of these systems is the major cause of reduced reflectance.