A strained quantum well laser with a fronthyphen;end power conversion efficiency exceeding 33percnt; under continuoushyphen;wave operation is demonstrated. The laser structure, grown by atmospheric pressure organometallic vaporhyphen;phase epitaxy, consists of a 70hyphen;Aring; In0.2Ga0.8As quantum well active region with graded index separate confinement heterostructure. Lasing wavelength is 930 nm, and the fronthyphen;end differential quantum efficiency is 58percnt; for broadhyphen;area oxide stripe lasers with a highhyphen;reflection coating on the rear facet. Fronthyphen;end, continuous power outputs greater than 1 W are available. Although these strained quantum well lasers have threshold currents as low as latticehyphen;matched GaAs quantum well lasers, their internal quantum efficiencies appear to be reduced, thus limiting the maximum attainable conversion efficiency.
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