Implantations of silicon and silicon fluoride ions into semihyphen;insulating GaAs wafers were performed to compare and evaluate the quality of thenhyphen;type layers that were produced. The use of SiFx(x=1,2,3) molecular ion implantations createsnhyphen;type active regions andn+ohmic contact layers employing a higher implant energy than that needed to achieve a similar projected range for silicon ions. The higher energy allows the implanter to operate with a more stable and reproducible ion beam for shallow implant applications. Variables affecting the net electrically active ion distributions, such as the ion beam incidence angle, and the use of furnace or rapid thermal annealing cycles for implantation activation are addressed. Capacitancehyphen;voltage profiles were obtained for thenhyphen;type regions, and the free carrier distributions for then+implantations were obtained by polaron electrolytic profiling. The implanted regions were characterized by Hallhyphen;effect measurements, cathodoluminescence, and secondary ion mass spectroscopy.
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