Properties of hydrogenated amorphous silicon prepared by biased activated reactive evaporation

摘要

The deposition of hydrogenated amorphous silicon by biased activated evaporation is described. The films are characterized by measurements of hydrogen content, conductivity and photoconductivity against temperature for intrinsic,n‐type andp‐type films, optical absorption, field‐effect mobility and density of states, space‐charge limited currents, and spin density. Silicon nitride and silicon carbide films are also described. It is concluded that the process offers high‐rate deposition of films whose quality is comparable with glow‐discharge films but with better thermal stability and no illumination‐induced conductivity changes.