High-temperature persistent spectral hole burning of Eu↑(3+)-doped SiO↓(2) glass prepared by the sol-gel process

摘要

Persistent spectral hole burning was observed at temperatures higher than 77 K in SiO↓(2) glass doped with the Eu↑(3+) ions. The Eu↑(3+)-doped SiO↓(2) glass was prepared using the sol-gel process of Si(OC↓(2)H↓(5)) ↓(4) and EuCl↓(3)·6H↓(2)O. A persistent spectral hole was burned in the excitation spectrum of the ↑(7)F↓(0)→↑(5)D↓(0) transition of Eu↑(3+) using a Rhodamine 6G dye laser, of which the hole width and depth were 1.6 cm↑(-1) and ～ 20 of the total intensity, respectively, at 77 K. Hole depth decreased with increasing temperature and disappeared above ～130 K. A possible mechanism for the hole burning is related to the local structure around Eu↑(3+) and the residual OH and H↓(2)O in the glass. # 1997 American Institute of Physics. S0003-6951 (97)00850-4