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首页> 外文期刊>Journal of Applied Physics >Structure-sensitive oxidation of the indium phosphide (001) surface
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Structure-sensitive oxidation of the indium phosphide (001) surface

机译:Structure-sensitive oxidation of the indium phosphide (001) surface

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The oxidation of anion- and cation-rich indium phosphide (001) has been investigated by exposure to unexcited molecular oxygen. Indium phosphide oxidation is an activated process and strongly structure sensitive. The In-rich δ(2×4) surface reacts with oxygen at 300 K and above. Core level x-ray photoemission spectra have revealed that the O_(2) dissociatively chemisorbs onto the δ(2×4), inserting into the In-In dimer and In-P back bonds. By contrast, the P-rich (2×1) reconstruction does not absorb oxygen up to 5×10~(5) Langmuir at 300 K, as judged by the unperturbed reflectance difference spectrum and low energy electron diffraction pattern. Above 455 K, oxygen reacts with the (2×1) inserting preferentially into the In-P back bonds and to a lesser extent into the phosphorus dimer bonds.

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