Comprehensive doping and temperature studies of spin relaxation in InSb

摘要

Time resolved pump-probe measurements of the spin relaxation rate in thick epilayers and bulk InSb have been carried out for a wide range of doping concentrations (intrinsic--2 X 10~(18) cm~(-3)) and temperatures (20 to 300 K). Our results are consistent with the dominance of the Elliott-Yafet mechanism across a wide range of carrier concentrations and temperatures for which the electron energy is less than 100 meV.