Carrier concentration and activation energy in heavily donorhyphen;doped silicon

摘要

The Leendash;McGill lsqb;J. Appl. Phys.46, 373 (1975)rsqb; model for computing the populations in heavily dopednhyphen;type silicon is applied with several objectives. First, it is used to evaluate Neumarkrsquo;s lsqb;Phys. Rev. B5, 408 (1972(; J. Appl. Phys.48, 3618 (1977)rsqb; expressions for screening and for the decrease of the activation energy in such systems. Next, it is used to systematically investigate the decrease in activation energy as doping density increases. Lastly, it is used to evaluate the adequacy of using dilute concentration statistics to fit experimental data.