Calculated electron and hole steadyhyphen;state drift velocities in lattice matched GaInP and AlGaInP

摘要

We present calculations based on an ensemble Monte Carlo program of the steadyhyphen;state electron and hole drift velocities in bulk Ga0.52In0.48P and Al0.26Ga0.26In0.48P as well as present a list of material parameters for these substances which are of use in the modeling of semiconductor devices made from these material types. The calculations are made including a realistic treatment of both the conduction and valence energy bands based on thekast;pmethod. All of the principal phonon scattering agents are included in our simulation as well.