Optical absorption quenching measurements have been carried out on a lot of plastically deformedn+samples (either Si or Se doped), which were EL2 free before deformation. It is shown that the density of EL2 defects created during the deformation increases linearly first with the dislocation density and then saturates for higher strains. The introduction rate of EL2 is also higher in the Sehyphen; than in the Sihyphen;doped material. Photoluminescence characterization of these same samples shows the appearance of the 0.93hyphen;eV band only after deformation; this band being associated with the divacancy. A possible model of EL2 creation during deformation is finally proposed.
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