Distinguishing surface and bulk contributions to third-harmonic generation in silicon

摘要

We report measurements of third-harmonic generation from ultrathin crystalline silicon layers of gradually varying thickness. Both the angular and thickness dependence of the third-harmonic light generated in transmission at normal incidence are consistent with negligible surface contribution to third-harmonic generation in silicon, even under tight focusing. This work illustrates a method for distinguishing surface and bulk contributions to harmonic generation.