3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40 at 650 nm

摘要

Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-$mu$m wide reach output powers of 3 W and conversion efficiencies of about 40 at 15$circ$C. For 5-mm wide laser bars (filling factor of 20), maximum output powers of 12 W in continuous-wave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported.