Precipitation of SiO2on dislocations in polycrystalline silicon with a high carbon concentration

摘要

Transmission electron microscopy (TEM) observations are reported on defects induced in polycrystalline silicon ribbon during the burnhyphen;off of the carbon support and the diffusion process. Ribbonhyphen;shaped silicon crystals are characterized by a high carbon and oxygen content at their solubility limits. TEM investigations show that SiO2is precipitated as either alpha or beta quartz on the dislocation cores during annealing in O2atmosphere.