An approximate formula for electron‐hole generation rate has been proposed. The proposed approximation is found to give good representation of the actual generation rate provided by Dunbar and Hauser and by Fossum. In order to determine the applicability of this approximation attempts have been made to calculate short‐circuit current, open‐circuit voltage, and solar cell efficiency of ann+psilicon solar cell. The calculations involve consideration of nonuniform doping, spatial dependence of the band, and drift field for then+region, and band gap narrowing, Shockley–Read–Hall recombination, and Auger recombination for bothn+andpregions. The variations of short‐circuit current, open‐circuit voltage, and solar cell efficiency with doping concentration of the substratepregion are found to be in good agreement with results obtained from experiments. The trend of the results indicates that proper optimization of the width and impurity concentration of the diffusednregion, of the width and impurity concentration of the substratepregion, and of the front‐surface recombination velocity is necessary for achieving the highest efficiency of a solar cell.
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