Films of (Y3minus;xminus;yBixPby) (Fe5minus;zGaz)O12(z=0ndash;1.1) and (Y3minus;xminus;yBixPby) (Fe5minus;wInw)O12(w=0ndash;0.6) garnets were prepared by liquidhyphen;phase epitaxy. The effects of tetrahedral Ga and octahedral In substitution on the Bihyphen;based growthhyphen;induced uniaxial anisotropy in (YBi)3Fe5O12films were measured. Both Ga and In resulted in a linear decrease in the anisotropy with increasing substitution. The effect of octahedral In was twice that of tetrahedral Ga.
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