Results of contamination experiments on MOS structures with aqueous solutions of NaCl, KCl, acetic acid, and purified water are presented. A special grid‐shaped electrode (Al or polycrystalline Si) was developed for these experiments. Various after‐treatments were applied. At temperatures of 250 and 350 °C, theI‐Vcurve shows two distinct peaks caused by ion transport in the oxide. Contamination with H+and Na+ions had a pronounced influence on the area of both peaks. The results showed that it is impossible to attribute the first peak to transport of Na+ions only and the second to that of K+ions. It is concluded that the first peak results from ion transport under conditions of thermodynamic equilibrium and that the second peak is controlled by the rate with which ions are released from traps at the interfaces. Models for both transport mechanisms are presented.
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机译：介绍了用NaCl、KCl、乙酸和纯净水的水溶液对MOS结构进行污染实验的结果。为这些实验开发了一种特殊的网格形电极（Al或多晶硅）。应用了各种后&连字符处理。在 250 和 350 °C 的温度下，I&连字符 V曲线显示由氧化物中的离子传输引起的两个不同的峰。H+和Na+离子污染对两个峰的面积有显著影响。结果表明，不可能将第一个峰仅归因于Na+离子的传递，而将第二个峰归因于K+离子的传递。得出的结论是，第一个峰是由热力学平衡条件下的离子传输产生的，第二个峰由离子从界面处的陷阱释放的速率控制。给出了两种传输机制的模型。
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