Measurement of thickness and diffusion length of thin epitaxial layers of GaP

摘要

A nondestructive photoelectronic technique for determining the thickness and minorityhyphen;carrier diffusion length of thin epitaxial layers of GaP is described. The method is useful over a thickness range of about one to ten diffusion lengths. The diffusion lengths can be rapidly measured to within 0.25 mgr;m when the diffusion length of the substrate is known. The accuracy of the thickness measurement is about 0.5 mgr;m. The measurements are independent of the supporting substrate thickness.