A relation between EL2 (Ecminus;0.81 eV) and EL6 (Ecminus;0.35 eV) in annealed HBhyphen;GaAs by hydrogen plasma exposure

摘要

We present annealing and hydrogenation behaviors for EL2 (Ecminus;0.81 eV) and EL6 (Ecminus;0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deephyphen;level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.