YBa2(Cu1−xMx)3O7−dgr;films (M=Ni and Al) with up to 11 at. dopant are fabricated on (001) SrTiO3substrates by codeposition of Y, BaF2, Cu, and M, and then post‐annealing in moist oxygen. All films are 300 nm thick. They are highly oriented with thecaxis perpendicular to the substrate, and their surfaces are as smooth as for undoped YBa2Cu3O7−dgr;films.Tc(x) decreases withxconsistent with bulk ceramic samples. The resistivity is metallic and ranges from 100 mgr;OHgr; cm to 2.5 mOHgr; cm at 100 K. The residual resistivity rgr;ab(0) atT=0 K, extrapolated from rgr;ab(T) aboveTcis approximately proportional toxup to 7 at. Al films and 11 at. Ni.
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机译：YBa2（Cu1−xMx）3O7−&dgr;薄膜（M=Ni和Al），最多11个。掺杂剂通过Y、BaF2、Cu和M的码沉积在（001）SrTiO3衬底上制备，然后在湿氧中进行后&连字符退火。所有薄膜的厚度均为 300 nm。它们具有高度取向性，垂直于基材，并且其表面与未掺杂的YBa2Cu3O7−&dgr;薄膜一样光滑。Tc（x）随x的降低而降低，与块状陶瓷样品一致。电阻率为金属，在 100 K 时的电阻率范围为 100 &mgr;&OHgr; cm 至 2.5 m&OHgr; cm。残余电阻率 &rgr;ab（0） atT=0 K，从上面的 &rgr;ab（T） 推断，大约与 7 at 成正比。% Al 薄膜和 11 at.% 镍。
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