Use of heavy doping effects to calculate the electrostatic field acting on the impurity atoms

摘要

Considering the heavyhyphen;doping and highhyphen;temperature effects, the electrostatic field acting on the phosphorus atoms into silicon during their diffusion at high temperatures is calculated. It is found that our theory predicts a smaller field than the classically expected results. This anomaly is explained basically by the fact that the Debye length decreases with the increase in the impurity concentration, which ultimately reduces the electric field produced.