Wavelength modification (Dgr;ℏohgr;=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing

摘要

Data are presented showing that wavelength modification, of at least 210 A˚ (from 8180 to 7970 A˚), of broad area room temperature pulsed quantum well heterostructure (QWH) laser diodes is possible by thermal annealing. Thermal annealing at 900 °C for 8 h results in only a minor change in the threshold current density, 385–425 A/cm2, thus making possible similar wavelength modification (8180–8080 A˚) ofcontinuous(cw) 300 K stripe‐geometry QWH laser diodes.