Explosive crystallization of dilute amorphous Sihyphen;Ge alloys

摘要

Structural characterization of pulsed laser irradiated amorphous alloys of Si(Ge) obtained with heavy dose (Ge) implantation in Si have been carried out using Rutherford backscattering spectrometry/channeling technique and transmission electron microscopy. Comparison of these alloys with selfhyphen;implanted amorphous Si after irradiation with a ruby laser showed significant reductions in the laser energy densities required for melt propagation, amorphoushyphen;crystalline interface penetration, and laserhyphen;induced damage formation. Explosive crystallization was found to occur in all samples. Large reductions in melting temperatures and latent heat of melting were found to be necessary to explain the results.