...
首页> 外文期刊>journal of chemical physics >BiF(A0+,vrsquo;) radiative lifetimes and rate coefficients for Vharr;T transfer and electronic quenching
【24h】

BiF(A0+,vrsquo;) radiative lifetimes and rate coefficients for Vharr;T transfer and electronic quenching

机译:BiF(A0+,vrsquo;) radiative lifetimes and rate coefficients for Vharr;T transfer and electronic quenching

获取原文
           

摘要

The radiative lifetime for several vibrational states (vrsquo;=0ndash;3) was measured for electronically excited BiF(A0+). The measured radiative lifetime is 1.4 mgr;s and does not vary for thevrsquo;levels investigated. Also measured for thosevrsquo;levels are the electronic quenching and Vndash;T rate coefficients for the rare gases He and Ar at an experimental temperature of sim;485 K. The results indicate Ar is slightly more efficient in electronic quenching than is He. For both gases the quenching rate constants increases withvrsquo;, with these rates becoming competitive with the radiative decay rate only for pressures in excess of 40 Torr. The vibrational relaxation (Vndash;T) rate constant for all levels studied are found to be at least an order of magnitude greater than those for electronic quenching. The reported Vndash;T rate coefficients scale asV1.7for both He and Ar forvrsquo;=0, tovrsquo;=3, a result which is contrary to the behavior predicted by the classical harmonic oscillator model.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号