Ion implantation of Si and Se donors in In0.53Ga0.47As

摘要

Ion implantation of Si and Se donors in In0.53Ga0.47As is reported. Both roomhyphen;temperature and elevated temperature (200thinsp;deg;C) implants are performed. Rapid thermal annealing as well as conventional furnace anneals have been used. Both species yield relatively shallow profiles with peak electron concentrations sim;1times;1019cmminus;3and with sheet resistance less than 20 OHgr;/sq. Our results indicate that elevated temperature implants are effective in reducing implant damage and are important for heavy ions like Se+to achieve high activation and mobility.