Investigation of thinhyphen;film Ni/singlehyphen;crystal SiC interface reaction

摘要

Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of heliumhyphen;carbon, xhyphen;ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickelhyphen;silicide, Ni2Si, was formed by heat treatment at 600thinsp;deg;C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at.thinsp;percnt; in the reacted film, and the CKLLline shape of AES in the reaction products as similar to that of elementary carbon.