Structure of recombination-induced stacking faults in high-voltage SiC p-n junctions

摘要

The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p-n~(-) diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 10~(3) and 10~(4) cm~(-1). All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3〈1-100〉-type.