Selective oxidation of buried AlGaAs versus AlAs layers

摘要

We report significant differences between the properties of buried oxides converted from AlGaAs and AlAs layers using selective wet oxidation. Layers of AlxGa1minus;xAs withxge;0.96 exhibit crystallographic dependent oxidation rates, while for layers withxle;0.92 the oxidation rate is isotropic. Mesas containing partially oxidized layers of AlAs are unstable to rapid thermal cycling and exhibit excessive strain at the oxide terminus, while mesas containing partially oxidized layers of AlGaAs are robust and lack evidence of strain. Finally, the oxidation of AlGaAs layers, rather than AlAs, is found to provide robust oxide apertures for reliable verticalhyphen;cavity surface emitting lasers. copy;1996 American Institute of Physics.