Meltback and pullover as causes of disturbances in liquidhyphen;phase epitaxial growth of InGaAsP/InP 1.3hyphen;mgr;m laser material

摘要

InGaAsP/InP 1.3hyphen;mgr;m laser material grown by liquidhyphen;phase epitaxy occasionally exhibits an anomalous xhyphen;ray diffraction pattern and may also have a high threshold current density. The origin of this effect is shown to be the contamination of the normalphyphen;type InP cladding layer with Ga and As. A typical composition of this quaternary cladding layer is determined, and secondaryhyphen;ion masshyphen;spectrometry analyses are used to show the contamination is most likely caused by pullover from the previous melt.