Highhyphen;power, diffractionhyphen;limitedhyphen;beam operation from interferometric, phasehyphen;locked arrays of AlGaAs/GaAs diode lasers

摘要

10/11hyphen;element interferometric phasehyphen;locked arrays with optimized facet coatings operate in array modeL=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. UnlikeYhyphen;junctionhyphen;coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a singlehyphen;lobe pattern requires a simple phasehyphen;corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.