Xhyphen;ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxy on Sithinsp;(001)thinsp;2times;1

摘要

Epitaxial molecular beam epitaxy growth of nanometric Ge layers on Sithinsp;(001)thinsp;2times;1 has been investigated,insitu, by xhyphen;ray Sithinsp;2pphotoelectron diffraction and Auger GeLMMelectron diffraction which consist essentially in preferential scattering of electrons in the direction of interatomic axes. Particular attention was paid to measuring the contrasts of this anisotropic emission in the (11macr;0) plane as a function of deposition parameters. It can thus be determined how crystalline material quality and epitaxial perfection are affected by the residual pressure below 5times;10minus;8mbar, the substrate temperature decrease to room temperature, the deposition rate, and the Ge overlayer thickness.