Neutron transmutation as a method to calibrate the infrared absorption of indium in silicon

摘要

The integrated intensity of selected absorption lines of indium in silicon can be used to obtain an infrared calibration factor for this impurity. Infrared calibration factors obtained with different electrical methods for measuring the In concentration are given. We have used the comparison of the In absorption in samples before and after partial compensation of In by neutron transmutation to correlate the difference between the integrated intensities of the In lines and the In concentration compensated by P, independently of the electrical measurements. The coefficient obtained gives slightly higher In concentrations than those using the resistivity and capacitancehyphen;voltage measurements as rsquo;rsquo;primary standards.rsquo;rsquo;