We propose a nanocomposite resist system that incorporates sub-nm carbon particles into a resist film to enable an ultrathin film resist process for nanometer pattern fabrication. Fullerene (C↓(60)) is found to be an excellent material for incorporation in view of its etching resistance, dissolution inhibiting effect, molecular size, and composite preparation. A nanocomposite system of C↓(60) and an electron-beam positive resist, ZEP520, show enhancements in both pattern contrast and etching resistance and provide 50 nm patterns in a 50-nm-thick film with a sensitivity of ～50 μC/cm↑(2).Furthermore. a C↓(60)-incorporated chemically amplified resist.SAL601,shows strong environmental stabilization in postexposure delay (＜10 after five days) presumably due to the reduction of free volume in the closely packed nanocomposite film. # 1997 American Institute of Physics. S0003-6951(97)00709-2
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