Upsidehyphen;down fabricated GaP monolithic display

摘要

An upsidehyphen;down fabricated GaP monolithic display havingphyphen;njunctions formed by zinc diffusion is developed and the feasibility of practical use studied. In this device, the zinc diffusion is performed at a temperature in the vicinity of 650thinsp;deg;C to increase the efficiency. The device front plane with thephyphen;nhyphen;junction segments faces the substrate upon which individual digits are assembled, and the light emitted from thephyphen;njunctions travels through the GaP chip and exits from the polished back plane, which faces the observer. The individual wire bonding of each segment is eliminated using fliphyphen;chip technique. It is thought that this device is the most suitable for practical use.