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首页> 外文期刊>Journal of Applied Physics >Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba_(0.7)Sr_(0.3)TiO_(3) thin films
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Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba_(0.7)Sr_(0.3)TiO_(3) thin films

机译:Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba_(0.7)Sr_(0.3)TiO_(3) thin films

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摘要

We found the dependence of luminescence efficiency on Er~(3+) concentration and sintering temperature in the Er-doped Ba_(0.7)Sr_(0.3)TiO_(3) (BST) thin films is governed by crystallinity and ion-ion interaction. X-ray diffraction and Raman studies of the sol-gel prepared samples show that the BST polycrystalline phase occurred when the sintering temperature reaches 700℃, whereas, it becomes worse for temperature above 700℃ resulting from phase separation and the Er~(3+) concentration exceeding 3 mol due to charge compensation mechanism. The observed green emission reaches maximum at sintering temperature 700℃ and 3 mol Er~(3+) ions concentration. We also showed the Er dopant does not affect the dielectric property of BST thin films in C-V measurement and the Ba_(0.7)Sr_(0.3)TiO_(3) films doped with Er~(3+) ions may have potential use for electroluminescence devices.

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