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Optimization of the △E effect in thin films and multilayers by magnetic field annealing

机译:Optimization of the △E effect in thin films and multilayers by magnetic field annealing

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摘要

The ΔE effect of amorphous (Fe{sub}90Co{sub}10){sub}78Si{sub}12B{sub}10 and Tb{sub}40Fe{sub}60 thin films as well as of Tb{sub}40Fe{sub}60/Fe{sub}50Co{sub}50 multilayers deposited on Si substrates using magnetron sputtering has been investigated. Influences of sputtering parameters and especially annealing conditions on the ΔE effect are discussed. In a field-annealed amorphous (Fe{sub}90Co{sub}10){sub}78Si{sub}12B{sub}10 thin film, the ΔE effect is about 30, assuming the Young's modulus of the film as 150 GPa. It was found that in case of thin-film substrate compounds, the magnetostrictive susceptibility is the determining factor of the size and field dependence of the ΔE effect.

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