Determination of the capture probabilities of two deep impurity levels by photoconductive decay

摘要

A general theoretical analysis of the photoconductivity decays is done on the basis of the Shockley Read theory using a two deep impurity model. All of the theoretical equations of the decay curves of the excess conductivity in which the relation between the reciprocal of lifetimes and the capture probabilities are linear and the sample conditions in which these equations should be realized are obtained approximately. Using these equations, the numerical values of the electron capture probabilities agr;nand bgr;nand the hole capture probability agr;pfor two deep impurity levels in nickel‐doped silicon are experimentally determined over a wide range of temperature.