Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN

摘要

GaN n(+)-p junction diodes were fabricated by implanting Si atoms into p-GaN. It was shown that we could use these diodes as GaN-based planar photodetectors. It was found that the dark current density of the diodes was around 1.5 muA/cm(2) and 50 nA/cm(2) at reverse biases of 3 and 1 V, respectively. Spectra response measurements revealed a cutoff wavelength at around 365 nm and a peak responsivity of 0.33 mA/W at 365 nm for the GaN planar n(+)-p photodetectors. It was also found that the visible rejection ratio was around 260. Furthermore, temporal response measurements revealed that the fall times of these GaN planar n(+)-p photodetectors were found to be shorter than 0.4 mus. (C) 2002 American Institute of Physics. References: 15