Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

摘要

We have investigated the effects of thermal cycling on the optical properties of In↓(0.2)Ga↓(0.8)As/GaAs single quantum well films bonded to Si(001) via the epitaxial lift-off technique.The optical and structural quality of the bonded films were monitored using cathodoluminescence (CL) imaging and spectroscopy. The films were stable through the temperature range (500-700 ℃) used in normal ln↓(x)Ga↓(1-x)As device processing. However, annealing at temperatures greater than ～700 ℃ resulted in layer intermixing accompanied by a blue-shift in the CL peak energy. The shifts in the CL peak energy were modeled by considering In-Ga interdiffusion at the interface and solving the Schr#dinger equation using appropriate band profiles for this region. # 1997American Institute of Physics.S0003-6951(97)03612-7