Resolution improvement for linear image sensors using indiumhyphen;tinhyphen;oxide/amorphous silicon junctions

摘要

This paper describes two types of photodiode arrays using indiumhyphen;tinhyphen;oxide/amorphous silicon (ITO/ahyphen;Si:H) junctions for a contacthyphen;type linear image sensor. One type is a photodiode array of separated ITO electrodes, anahyphen;Si:H stripe layer, and a common metal (Cr) electrode. The other consists of a common ITO electrode, anahyphen;Si:H stripe layer, and separated Cr electrodes. We investigated the bias dependence of the photocurrent and its spatial distribution for the two types of diode array. Our results indicate that the photocarriers generated around the element for a common ITO electrode type deteriorate the resolving power of the diode array, which can be improved by using separated ITO electrodes. A separated ITO electrode increases the modulation transfer function and the fineness of linear image sensors.