We describe a new analytical model for heterostructure fieldhyphen;effect transistors. This model is based on detailed consideration of different forces acting on carriers in a twohyphen;dimensional gas and on the analysis of the difference between the electric potential and electron quasihyphen;Fermi level. We also propose an approximate analytical model that takes into account the velocity saturation in the channel. This model incorporates an arbitrary dependence of the carrier concentration in the channel on the gate voltage. The obtained results are in good agreement with experimental data fornhyphen;channel heterostructure insulated gate fieldhyphen;effect transistors. Similar analytical models can also be developed for other devices such asphyphen;channel transistors, superlattice fieldhyphen;effect transistors, and quantum well fieldhyphen;effect transistors.
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