The growth of high quality CdTe epitaxial films onphyphen;InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a twohyphen;dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the xhyphen;ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280thinsp;deg;C appeared to have an optimum crystal perfection at a substrate temperature of about 245thinsp;deg;C. These results also indicated that the CdTe films grown above 245thinsp;deg;C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
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